Vishay Intertech SI7617DN-T1-GE3
2,473在庫あり
Delivery within 1 day数量
単価
1+
$0.69657
10+
$0.57864
600+
$0.35701
1,200+
$0.35344
3,000+
$0.34637
最小注文数量 1
合計:
$0.70
送料無料¥199
数量が多いと価格は安くなりますか？¥
SI7617DN-T1-GE3
VISHAY
1+
$0.59453
10+
$0.49373
30+
$0.44323
100+
$0.39283
500+
$0.32102
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
SI7617DN-T1-GE3
VISHAY
/
0在庫あり
0在庫あり
Delivery within 5 days
合計:$0.00
合計:$0.00
SI7617DN-T1-GE3
VISHAY
1+
$0.27457
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
SI7617DN-T1-GE3
VISHAY
1+
$0.28913
3,000+
$0.27459
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
| 属性 | 値 |
|---|---|
| 製造元部品番号 | SI7617DN-T1-GE3 |
| メーカー | VISHAY |
| 商品カテゴリ | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Continuous Drain Current (Id) | 35A |
| Total Gate Charge (Qg@Vgs) | 59nC@10V |
| Input Capacitance (Ciss@Vds) | 1.8nF@15V |
| Power Dissipation (Pd) | 3.7W;52W |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12.3mΩ@13.9A,10V |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Type | P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Current - Continuous Drain(Id) | 35A |
| Pd - Power Dissipation | 52W |
| Gate Charge(Qg) | 59nC@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 312pF |
| RDS(on) | 12.3mΩ@10V,13.9A |
| Output Capacitance(Coss) | 370pF |
| Input Capacitance(Ciss) | 1.8nF@15V |
| Package | PowerPAK1212-8 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 3000 |
| Weight | 0.072 |
