Vishay Intertech SI4459ADY-T1-GE3
30V 29A 5m@10V,15A 2.5V@250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS

配達:







支払い:















22在庫あり
Delivery within 1 day数量
単価
1+
$0.93390
10+
$0.77358
最小注文数量 1
合計:
$0.93
送料無料¥199
数量が多いと価格は安くなりますか?¥
SI4459ADY-T1-GE3
VISHAY
1+
$0.76973
10+
$0.63600
30+
$0.56995
100+
$0.50390
500+
$0.42710
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
SI4459ADY-T1-GE3
VISHAY
/
0在庫あり
0在庫あり
Delivery within 5 days
合計:$0.00
合計:$0.00
SI4459ADY-T1-GE3
VISHAY
1+
$0.65958
100+
$0.58105
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
SI4459ADY-T1-GE3
VISHAY
1+
$0.58013
10+
$0.52707
30+
$0.49170
100+
$0.43864
500+
$0.41388
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
| 属性 | 値 |
|---|---|
| 製造元部品番号 | SI4459ADY-T1-GE3 |
| メーカー | VISHAY |
| 商品カテゴリ | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V@250uA |
| Type | 1 Piece P-Channel |
| Continuous Drain Current (Id) | 29A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5mΩ@10V,15A |
| Total Gate Charge (Qg@Vgs) | 195nC@10V |
| Input Capacitance (Ciss@Vds) | 6nF@15V |
| Power Dissipation (Pd) | 3.5W;7.8W |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | P-Channel |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Pd - Power Dissipation | 45W |
| Current - Continuous Drain(Id) | 29A |
| RDS(on) | 7.75mΩ@4.5V,10A |
| Reverse Transfer Capacitance (Crss@Vds) | 790pF |
| Output Capacitance(Coss) | 860pF |
| Input Capacitance(Ciss) | 6nF |
| Gate Charge(Qg) | [email protected] |
| Package | SO-8 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 2500 |
| Weight | 0.245 |















