Wuxi NCE Power Semiconductor NCE30P25S
30V 25A 3.5W 9m@10V,15A 1V@250uA 1 Piece P-Channel SOIC-8 MOSFETs ROHS
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NCE30P25S
NCE
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| 属性 | 値 |
|---|---|
| 製造元部品番号 | NCE30P25S |
| メーカー | NCE |
| 商品カテゴリ | MOSFETs |
| RoHS | Yes |
| ECCN | - |
| Power Dissipation (Pd) | 3.5W |
| Drain Source Voltage (Vdss) | 30V |
| Continuous Drain Current (Id) | 25A |
| Type | 1 Piece P-Channel |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 9mΩ@10V,15A |
| Reverse Transfer Capacitance (Crss@Vds) | 268pF |
| Input Capacitance (Ciss@Vds) | 3.96nF@15V |
| Total Gate Charge (Qg@Vgs) | 65nC |
| Drain to Source Voltage | 30V |
| Number | 1 P-Channel |
| Operating Junction Temperature Range | -55℃~+150℃ |
| Type | P-Channel |
| Gate Threshold Voltage (Vgs(th)) | 2.5V@250uA |
| Current - Continuous Drain(Id) | 25A |
| Pd - Power Dissipation | 3.5W |
| Gate Charge(Qg) | 65nC@10V |
| RDS(on) | 14mΩ@4.5V,10A |
| Output Capacitance(Coss) | 486pF |
| Input Capacitance(Ciss) | 3.96nF |
| Package | SOP-8 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 4000 |
| Weight | 0.2 |
