Wuxi NCE Power Semiconductor NCE65TF099
650V 38A 89m@10V,19A 322W 3.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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支払い:
413在庫あり
Delivery within 1 day数量
単価
1+
$2.42658
10+
$2.02189
50+
$1.76974
100+
$1.50980
最小注文数量 1
合計:
$2.43
送料無料¥199
数量が多いと価格は安くなりますか？¥
NCE65TF099
NCE
1+
$2.19734
10+
$1.83168
50+
$1.60214
100+
$1.36800
500+
$1.26086
0在庫あり
0在庫あり
Delivery within 1 day
最小数量 1
合計:$0.00
合計:$0.00
| 属性 | 値 |
|---|---|
| 製造元部品番号 | NCE65TF099 |
| メーカー | NCE |
| 商品カテゴリ | MOSFETs |
| RoHS | Yes |
| ECCN | - |
| Drain Source Voltage (Vdss) | 650V |
| Type | 1 N-channel |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@250uA |
| Total Gate Charge (Qg@Vgs) | 45nC@10V |
| Continuous Drain Current (Id) | 38A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 89mΩ@10V,19A |
| Power Dissipation (Pd) | 322W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.5pF@50V |
| Input Capacitance (Ciss@Vds) | 2.8nF@50V |
| Drain to Source Voltage | 650V |
| Operating Junction Temperature Range | -55℃~+150℃@(Tj) |
| Number | 1 N-Channel |
| Gate Charge(Qg) | 45nC@10V |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Current - Continuous Drain(Id) | 38A |
| RDS(on) | 89mΩ@10V,19A |
| Pd - Power Dissipation | 322W |
| Input Capacitance(Ciss) | 2.8nF@50V |
| Package | TO-220 |
| Packaging | Tube-packed |
| Standard Package | 50 |
| Weight | 2.74 |
