Infineon Technologies IPB042N10N3G
100V 137A 4.2m@10V,100A 214W 3.5V@150uA 1 N-Channel TO-263-2 MOSFETs ROHS

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| 属性 | 値 |
|---|---|
| 製造元部品番号 | IPB042N10N3G |
| メーカー | Infineon |
| 商品カテゴリ | MOSFETs |
| RoHS | Yes |
| ECCN | EAR99 |
| Operating Temperature | -55℃~+175℃ |
| Power Dissipation (Pd) | 214W |
| Type | 1 N-channel |
| Reverse Transfer Capacitance (Crss@Vds) | 41pF@50V |
| Input Capacitance (Ciss@Vds) | 8.41nF@50V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V@150uA |
| Total Gate Charge (Qg@Vgs) | 117nC |
| Drain to Source Voltage | 100V |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Number | 1 N-Channel |
| Pd - Power Dissipation | 214W |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Current - Continuous Drain(Id) | 137A |
| RDS(on) | 4.2mΩ@10V,100A |
| Input Capacitance(Ciss) | 8.41nF@50V |
| Gate Charge(Qg) | 117nC |
| Package | TO-263-3 |
| Packaging | Tape & Reel (TR) |
| Standard Package | 1000 |
| Weight | 2.028 |















