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Infineon Technologies IPB042N10N3G

100V 137A 4.2m@10V,100A 214W 3.5V@150uA 1 N-Channel TO-263-2 MOSFETs ROHS

製造元部品番号:
IPB042N10N3G
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製造元:
Infineon
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CM番号:C71192324

パッケージ:TO-263-3

データシート:
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$0.46074
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合計:
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送料無料¥199
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IPB042N10N3G

Infineon

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IPB042N10N3G

Infineon

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$0.45365
100+
$0.42053
500+
$0.38742
1,000+
$0.37086

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属性
製造元部品番号IPB042N10N3G
メーカーInfineon
商品カテゴリMOSFETs
RoHSYes
ECCNEAR99
Operating Temperature-55℃~+175℃
Power Dissipation (Pd)214W
Type1 N-channel
Reverse Transfer Capacitance (Crss@Vds)41pF@50V
Input Capacitance (Ciss@Vds)8.41nF@50V
Gate Threshold Voltage (Vgs(th)@Id)3.5V@150uA
Total Gate Charge (Qg@Vgs)117nC
Drain to Source Voltage100V
Operating Junction Temperature Range-55℃~+175℃
Number1 N-Channel
Pd - Power Dissipation214W
Gate Threshold Voltage (Vgs(th))3.5V
Current - Continuous Drain(Id)137A
RDS(on)4.2mΩ@10V,100A
Input Capacitance(Ciss)8.41nF@50V
Gate Charge(Qg)117nC
PackageTO-263-3
PackagingTape & Reel (TR)
Standard Package1000
Weight2.028

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