Infineon Technologies FP150R12N3T7
150A 1.2kV Through Hole,122x62.5mm Single IGBTs

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$96.21408
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FP150R12N3T7
Infineon
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FP150R12N3T7
Infineon
1+
$102.77572
30+
$97.44859
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Delivery within 1 day
最小数量 1
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| 属性 | 値 |
|---|---|
| 製造元部品番号 | FP150R12N3T7 |
| メーカー | Infineon |
| 商品カテゴリ | IGBT Transistors / Modules |
| RoHS | Yes |
| ECCN | - |
| Operating Temperature | -40℃~+175℃ |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Current - Collector(Ic) | 150A |
| IGBT Type | - |
| Reverse Recovery Time(trr) | - |
| Pd - Power Dissipation | - |
| Input Capacitance(Cies) | - |
| Reverse Transfer Capacitance (Cres) | - |
| Current- Forward(If) | - |
| Pulsed Current- Forward(Ifm) | - |
| Output Capacitance(Coes) | - |
| Td(off) | 331ns |
| Td(on) | 172ns |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] |
| Gate Charge(Qg) | 2.5uC@600V,±15V |
| Vce Saturation(VCE(sat)) | 1.8V@150A,15V |
| Switching Energy(Eoff) | 10.4mJ |
| Turn-On Energy (Eon) | 16.6mJ |
| Voltage - Forward(Vf) | 1.72V@150A |
| Package | Through Hole,122x62.5mm |
| Packaging | Box-packed |
| Standard Package | 10 |
| Weight | 363.8 |















